منابع مشابه
Tunnel diode oscillator measurements of the upper critical magnetic field of FeTe(0.5)Se(0.5).
Temperature dependence of the upper critical magnetic field (Hc2) of single crystalline FeTe0.5Se0.5(Tc = 14.5 K) have been determined by tunnel diode oscillator-based measurements in magnetic fields of up to 55 T and temperatures down to 1.6 K. The Werthamer-Helfand-Hohenberg model accounts for the data for magnetic field applied both parallel (H ‖ ab) and perpendicular (H ‖ c) to the iron con...
متن کاملTunnel-Diode Low-Level Detection
An analysis of tnmel-diode low-level detection is presented for the purpose of explaining some of the unusual detection characteristics that occur under certain hias conditions. For example, in the vicinity of its inflection hias point, a tmmel diode exhibits a discriminator-like rectification behavior with two sensitivity peaks. When biased at one of these peaks, the diode is capable of unusua...
متن کاملDirectly diode-pumped high-energy Ho:YAG oscillator.
We report on the high-energy laser operation of an Ho:YAG oscillator resonantly pumped by a GaSb-based laser diode stack at 1.9 μm. The output energy was extracted from a compact plano-concave acousto-optically Q-switched resonator optimized for low repetition rates. Operating at 100 Hz, pulse energies exceeding 30 mJ at a wavelength of 2.09 μm were obtained. The corresponding pulse duration at...
متن کاملDiode-pumped 99 fs Yb:CaF2 oscillator.
We demonstrate the generation of 99 fs pulses by a mode-locked laser oscillator built around a Yb:CaF(2) crystal. An average power of 380 mW for a 13 nm bandwidth spectrum centered at 1053 nm is obtained. The short-pulse operation is achieved thanks to a saturable absorber mirror and is stabilized by the Kerr lens effect. We investigated the limits of the stabilization process and observed a re...
متن کاملDemonstration of an amorphous carbon tunnel diode
Negative differential conductance in metal/amorphous nitrogenated carbon a-CNx /Si structures is demonstrated at room temperature. These metal-insulator-semiconductor tunnel diodes are fabricated by optimizing the tunnel barrier at the a-CNx /Si junction through the control of the band gap and nitrogen doping level in carbon where this a-C layer acts as a semi-insulator. A small electron tunnel...
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ژورنال
عنوان ژورنال: TEION KOGAKU (Journal of Cryogenics and Superconductivity Society of Japan)
سال: 1974
ISSN: 0389-2441,1880-0408
DOI: 10.2221/jcsj.9.228